S. A Martin BRITTO DHAS, S. OVIYA, F. IRINE MARIA BINCY, Ikhyun KIM

DOI Number: 10.82241/ceas-hisst-2024-319

Conference number: HiSST-2024-319

Indium selenide is a semiconducting material that has a layer-by-layer crystal structure. The present work treats Indium selenide with dynamic shock waves using a Semi-automatic Reddy tube as 100, 200, 300, and 400 shock pulses. In4Se3 switched from orthorhombic to rhombohedral (α- In2Se3) phase at 100 shock pulses and remained in the same phase up to 400 shock pulses by applying 2.0 MPa of pressure and a temperature of 864 K. The crystal structure was examined using Powder X-ray diffraction, and Raman analysis. The morphology and optical properties of the material are investigated using Scanning Electron Microscope, and UV-DRS. The results from XRD and Raman confirm the phase transition through the formation and disappearance of the peak. While increasing the shocks, the morphology produces a layered shape, and optical investigation revealed that the band gap of the material changed from semi-conducting to insulator.

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In Categories: 1.Events, HiSST 2024, Materials and Structures
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